Good sensitivity characteristics at low illumination and in the near infrared light region are a required performance of cameras for industrial applications. These new image sensors use a back-illuminated structure and also have an expanded photodiode area, which simultaneously improve sensitivity in both light regions compared to the existing front-illuminated structure.
In addition, the new image sensors realize improved sensitivity characteristics two or more times in the visible-light region and three or more times in the near infrared light region (850 nm) compared to the existing Sony product (IMX236LQJ) with the same pixel size and increased sensitivity in the near infrared light region (Photograph 2).
The IMX290LQR supports both multiple exposure and DOL-type WDR functions. (The IMX291LQR supports only the multiple exposure-type WDR function.)
The multiple exposure-type WDR function outputs one set of two or four frames with different exposure times. In this case, the gain can also be set separately for each frame in addition to the exposure time.
The DOL-type WDR function outputs the data for up to three frames with different storage times line by line. By performing special signal processing with an ISP (Image Signal Processor) or other device at the image sensor rear-end, this enables improvement of picture quality under low illumination compared to the multiple exposure-type WDR function.
The IMX290LQR and IMX291LQR are equipped with three different types of output interface (low-voltage LVDS serial, MIPI CSI-2, CMOS parallel) to meet diverse needs. The low-voltage LVDS serial interface has a maximum output data rate of 445.5 Mbps/ch and the number of output channels can be selected from 2ch, 4ch or 8ch. The MIPI CSI-2 interface has a maximum output data rate of 891 Mbps/lane and the number of output channels can be selected from 2 lanes or 4 lanes. The CMOS parallel interface has a maximum output data rate of 74.25 Mpixels/s.
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Condition: 400 lx F1.4 (Full HD image, 60 frames/s)
IMX290LQR (Internal gain 0 dB)
Condition1: 0.08 lx F1.4 (Full HD image, 30 frames/s)
Existing IMX236LQJ
Internal gain 48 dB
IMX290LQR
Internal gain 63 dB
Condition 2: 0 lx (850 nm IR) F1.4 (Full HD image, 30 frames/s)
Existing IMX236LQJ
Internal gain 0 dB
IMX290LQR
Internal gain 0 dB
| Item | IMX290LQR / IMX291LQR | |
|---|---|---|
| Output image size | Diagonal 6.46 mm (Type 1 / 2.8) (Full HD mode) Diagonal 4.31 mm (Type 1 / 4.2) (HD720p mode) | |
| Number of effective pixels | 1945 (H) × 1097 (V) approx. 2.13M pixels 1305 (H) × 729 (V) approx. 0.95M pixels | |
| Unit cell size | 2.9 µm (H) × 2.9 µm (V) | |
| Optical blacks | Horizontal | Front: 0 pixels, rear: 0 pixels |
| Vertical | Front: 10 pixels, rear: 0 pixels | |
| Input drive frequency | 74.25 MHz / 37.125 MHz | |
| Package | 110-pin LGA | |
| Supply voltage VDD (Typ.) | 2.9 V / 1.8 V / 1.2 V | |
| Item | Value | Remarks | |
|---|---|---|---|
| Sensitivity (F5.6) | Typ. | 1300 mV | 1/30s accumulation |
| Saturation signal | Min. | 914 mV | Tj = 60 °C |
| Mode | Interface | ADC | Frame rate (Max.) | Bit rate (Max.) |
|---|---|---|---|---|
| Full HD 1080p | Low voltage LVDS serial 8 ch | 10 bits | 120 frames/s | 445.5 Mbps/ch |
| Low voltage LVDS serial 8 ch | 12 bits | 60 frames/s | 222.75 Mbps/ch | |
| CSI-2 4lane | 10 bits | 120 frames/s | 891 Mbps/lane | |
| CSI-2 4lane | 12 bits | 60 frames/s | 445.5 Mbps/lane | |
| CMOS parallel | 10 bits / 12 bits | 30 frames/s | 74.25 Mpixel/s | |
| HD720p | Low voltage LVDS serial 4 ch | 10 bits | 120 frames/s | 594 Mbps/ch |
| Low voltage LVDS serial 4 ch | 12 bits | 60 frames/s | 297 Mbps/ch | |
| CSI-2 4lane | 10 bits | 120 frames/s | 594 Mbps/lane | |
| CSI-2 4lane | 12 bits | 60 frames/s | 297 Mbps/lane | |
| CMOS parallel | 10 bits / 12 bits | 60 frames/s | 74.25 Mpixel/s |
